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Exciton–phonon interaction in semiconductors with intermediate polar coupling
Author(s) -
Schäfer W.,
Gartner P.,
Jahnke F.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303188
Subject(s) - semiconductor , exciton , polar , phonon , coupling (piping) , physics , vertex (graph theory) , condensed matter physics , spectral line , quantum mechanics , materials science , mathematics , discrete mathematics , metallurgy , graph
The importance of vertex corrections in the description of the absorption spectra in semiconductors is discussed. These corrections are responsible for the excitonic correlation of the phonon‐scattered carriers and it is shown that these correlations are essential for the description of excitonic sidebands in the case of intermediate coupling. Different approximation schemes are compared in numerical examples.