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Autocorrelation spectroscopy on single GaInAs/GaAs quantum wells
Author(s) -
Neuberth Ulrich,
von Freymann Georg,
Wegener Martin,
Nau Siegfried,
Stolz Wolfgang
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303169
Subject(s) - autocorrelation , spectroscopy , photoluminescence , atomic force microscopy , materials science , quantum well , spectral line , etching (microfabrication) , measure (data warehouse) , optoelectronics , analytical chemistry (journal) , chemistry , optics , physics , nanotechnology , mathematics , quantum mechanics , laser , statistics , layer (electronics) , database , computer science , chromatography
We investigate an atomically rough single GaInAs/GaAs quantum well by means of autocorrelation spectroscopy. The data are based on thousands of individual low‐temperature nano‐photoluminescence spectra and exhibit a peak around 1.8 meV energy difference. On the same sample, we measure the topography of one of the buried heterointerfaces which is possible by using highly‐selective etching and atomic force microscopy.