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Level repulsion of exciton states in disordered semiconductor nanostructures
Author(s) -
Zimmermann R.,
Runge E.,
Savona V.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303166
Subject(s) - exciton , semiconductor , nanostructure , autocorrelation , condensed matter physics , rayleigh scattering , spectral line , physics , photoluminescence , semiconductor nanostructures , materials science , quantum mechanics , optics , mathematics , statistics
Exciton states in semiconductor nanostructures with disorder exhibit level repulsion, a concept known from random matrix theory. Its manifestations in time‐resolved Rayleigh spectra and in the autocorrelation of optical nearfield spectra are explained, and available experimental results are critically discussed. It is proposed to investigate the intrasubband absorption in quantum wells with emphasis on the aspects of level repulsion.