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Semiconductor excitons in photonic crystals
Author(s) -
Eichmann R.,
Pasenow B.,
Meier T.,
Stroucken T.,
Thomas P.,
Koch S. W.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303159
Subject(s) - photonic crystal , exciton , semiconductor , dielectric , coulomb , photonics , condensed matter physics , band gap , position (finance) , optoelectronics , materials science , quantum well , physics , optics , laser , electron , quantum mechanics , finance , economics
Optical properties of a semiconductor quantum well in the vicinity of a two‐dimensional photonic crystal are investigated. Due to the periodic spatial modulation of the dielectric environment the effective Coulomb interaction potential exhibits the periodicity of the photonic crystal. As a consequence, the excitonic binding energy varies periodically by up to 50% depending on the spatial position of the exciton relative to the structured dielectric. The self image charge effects result in a position dependent shift of the single‐particle bandgap such that the spectral position of the absorption spectrum also develops the periodicity of the photonic surrounding.