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Open issues for lasing at 1.3 μm in MOCVD‐grown quantum dots
Author(s) -
De Giorgi M.,
Passaseo A.,
Maruccio G.,
De Vittorio M.,
Todaro M. T.,
Rinaldi R.,
Cingolani R.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303090
Subject(s) - lasing threshold , metalorganic vapour phase epitaxy , quantum dot , picosecond , materials science , optoelectronics , relaxation (psychology) , dipole , scattering , condensed matter physics , ground state , laser , physics , atomic physics , optics , nanotechnology , quantum mechanics , epitaxy , layer (electronics) , wavelength , psychology , social psychology
A study of the carrier dynamics in MOCVD‐grown InGaAs/GaAs quantum dots emitting at 1.3 μm at room temperature has been done. The PL rise time measured as a function of the temperature shows that carrier relaxation into the QD ground state occurs within a few picoseconds due to a very efficient carrier–phonon scattering process. In spite of this very efficient carrier capture in our dots and a small temperature dependence of the quantum efficiency, which are favorable for laser applications, we show that our QDs have a very strong permanent dipole moment which prevents the emission from the ground state and the lasing at 1.3 μm.