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Optical spin polarization in negatively charged InAs self‐assembled quantum dots under applied electric field
Author(s) -
Kalevich V. K.,
Ikezawa M.,
Okuno T.,
Shiryaev A. Yu.,
Zhukov A. E.,
Ustinov V. M.,
Brunkov P. N.,
Masumoto Y.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303021
Subject(s) - quantum dot , electric field , polarization (electrochemistry) , photoluminescence , excitation , condensed matter physics , spin polarization , circular polarization , physics , optoelectronics , materials science , chemistry , magnetic field , electron , quantum mechanics
We have studied the influence of an external electric field on the optical spin polarization of initially negatively charged InAs/GaAs quantum dots (QDs). The spin polarization of the carriers was controlled by measuring the photoluminescence (PL) circular polarization. We have found that the PL polarization of the QD is negative under an excitation above the GaAs barrier, and that it becomes positive under an excitation below the barrier. An applied negative electric field destroys both positive and negative polariza‐tion. The time decay of the negative polarization was found from time‐resolved measurements to exceed strongly the QD radiative lifetime. This fact indicates a long‐living spin memory in the dots under study.