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Two‐dimensional ordering of InGaAs quantum dots formed on an artificial nano‐hole array with 100 nm periodicity
Author(s) -
Nakamura Y.,
Ikeda N.,
Sugimoto Y.,
Nakamura H.,
Ohkouchi S.,
Asakawa K.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303014
Subject(s) - quantum dot , scanning tunneling microscope , nucleation , annealing (glass) , materials science , quantum tunnelling , nano , optoelectronics , nanotechnology , deposition (geology) , gallium arsenide , chemistry , paleontology , organic chemistry , sediment , composite material , biology
We have successfully formed two‐dimensionally ordered InGaAs and InAs quantum dots (QDs) by controlling the nucleation sites on artificially prepared nano‐hole arrays with a 100 nm periodicity. The ordered InGaAs QDs were realized by a combination of a low‐temperature deposition of InGaAs and its annealing on the nano‐hole arrays. These ordered InGaAs played a role as a template for upper InAs QDs. In this study, we used in situ scanning tunneling microscopy (STM), which enabled us to observe each grown surface on the samples.