Two‐dimensional ordering of InGaAs quantum dots formed on an artificial nano‐hole array with 100 nm periodicity | Zendy

Nakamura Y. | Zendy; Ikeda N. | Zendy; Sugimoto Y. | Zendy; Nakamura H. | Zendy; Ohkouchi S. | Zendy; Asakawa K. | Zendy

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Two‐dimensional ordering of InGaAs quantum dots formed on an artificial nano‐hole array with 100 nm periodicity

Author(s) -

Nakamura Y.,

Ikeda N.,

Sugimoto Y.,

Nakamura H.,

Ohkouchi S.,

Asakawa K.

Publication year - 2003

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200303014

Subject(s) - quantum dot , scanning tunneling microscope , nucleation , annealing (glass) , materials science , quantum tunnelling , nano , optoelectronics , nanotechnology , deposition (geology) , gallium arsenide , chemistry , paleontology , organic chemistry , sediment , composite material , biology

We have successfully formed two‐dimensionally ordered InGaAs and InAs quantum dots (QDs) by controlling the nucleation sites on artificially prepared nano‐hole arrays with a 100 nm periodicity. The ordered InGaAs QDs were realized by a combination of a low‐temperature deposition of InGaAs and its annealing on the nano‐hole arrays. These ordered InGaAs played a role as a template for upper InAs QDs. In this study, we used in situ scanning tunneling microscopy (STM), which enabled us to observe each grown surface on the samples.

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