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High‐quality In x Ga 1– x As/Al 0.30 Ga 0.70 As quantum dots grown in inverted pyramids
Author(s) -
Pelucchi E.,
Baier M.,
Ducommun Y.,
Watanabe S.,
Kapon E.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200303006
Subject(s) - quantum dot , luminescence , excited state , ground state , fabrication , materials science , chemical vapor deposition , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , physics , medicine , alternative medicine , pathology , chromatography
We report here on the fabrication by organometallic chemical vapour deposition of In x Ga 1– x As quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al 0.30 Ga 0.70 As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.