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A novel AlGaAs/GaAs heterojunction‐based Hall sensor designed for low magnetic field measurements
Author(s) -
Sghaier H.,
Bouzaïene L.,
Sfaxi L.,
Maaref H.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301991
Subject(s) - heterojunction , magnetic field , sensitivity (control systems) , optoelectronics , materials science , doping , electron , condensed matter physics , physics , electronic engineering , engineering , quantum mechanics
A self‐consistent theoretical analysis, using both Schrödinger and Poisson equations, is made to investigate and propose novel Hall devices based on AlGaAs/GaAs heterostructures. The novel heterostructures are designed and optimized with respect to the measurements of low magnetic field du to their high sensitivity. In this study we attempt to show that the electron mobility of the studied heterostructure may be enhanced without loss in interface electron concentration by both increasing the spacer thickness and by inserting a δ‐doping in a narrow quantum well within the AlGaAs barrier where the Al concentration in the well is less than in the barrier. Therefore, we predict a significant enhancement of device sensitivity to low magnetic field without compromise in noise performance. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)