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Study of two‐dimensional electron gas in AlN/GaN heterostructure by a self‐consistent method
Author(s) -
Kong Y. C.,
Zheng Y. D.,
Zhou C. H.,
Deng Y. Z.,
Gu S. L.,
Shen B.,
Zhang R.,
Jiang R. L.,
Shi Y.,
Han P.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301946
Subject(s) - heterojunction , fermi gas , materials science , piezoelectricity , electronic band structure , electron density , electron , band offset , condensed matter physics , optoelectronics , physics , band gap , valence band , quantum mechanics , composite material
Properties of a two‐dimensional electron gas (2DEG) in an AlN/GaN heterostructure have been studied by solving the coupled Schrödinger and Poisson equations self‐consistently. The results show that the 2DEG concentration and sheet density are 2.54 × 10 20 cm −3 and 4.24 × 10 13 cm −2 in the AlN/GaN structure, which are much higher than the corresponding values of 3.77 × 10 19 cm −3 and 1.04 × 10 13 cm −2 in an Al 0.2 Ga 0.8 N/GaN structure due to the larger band offset and the stronger piezoelectric and spontaneous polarization effects. It is also shown that the electron distribution is narrower and the subband occupation of carriers is higher in the AlN/GaN structure than in the Al 0.2 Ga 0.8 N/GaN structure. These findings make the AlN/GaN structure very attractive for use in high‐power and high‐frequency operations. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)