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Analysis of the behaviour of magnitude m with magnetic field in corrective term “ mT 1/2 ”of the metallic electrical conductivity in n‐type InP
Author(s) -
El kaaouachi A.,
Nafidi A.,
Biskupski G.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301910
Subject(s) - condensed matter physics , electrical resistivity and conductivity , conductivity , magnetic field , electron , chemistry , indium phosphide , materials science , physics , quantum mechanics , gallium arsenide
Abstract We present measurements of the electrical conductivity of barely metallic n‐type indium phosphide (InP) that are driven to the metal‐insulator transition (MIT) by a magnetic field. The experiments are carried out at low temperature in the range 4.2−0.066 K and in magnetic fields up to 11 T. The analysis of the low‐temperature correction to the Boltzmann conductivity due to electron–electron interaction as a function of the magnetic field allowed us to study the influence of exchange and Hartree interactions on the change of the sign of the electron–electron interaction correction. When the magnetic field is increased, several phenomena contribute to this corrective term “ mT 1/2 ” among which are the spin‐splitting effect, the electron–electron interaction effect, and weak localisation effect. Not too close to the MIT, both the inelastic diffusion length L I and the interaction length L T contribute to a T 1/2 corrective term of the metallic electrical conductivity σ . It is convenient to develop a criterion to distinguish their contribution. This is based on the relation between the magnitude m and the zero temperature σ ( T = 0). (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)