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Effect of gallium doping on the electronic structure of lead‐telluride‐based alloys
Author(s) -
Skipetrov E.,
Zvereva E.,
Kovalev B.,
Slyn'ko E.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301903
Subject(s) - gallium , doping , lead telluride , hall effect , impurity , materials science , gallium antimonide , electrical resistivity and conductivity , band gap , analytical chemistry (journal) , activation energy , condensed matter physics , chemistry , optoelectronics , metallurgy , physics , organic chemistry , quantum mechanics , chromatography , superlattice
Galvanomagnetic and photoelectric properties of the Pb 1− y Sn y Te (0 ≤ y ≤ 0.06) and Pb 1− x Ge x Te (0.04 ≤ x ≤ 0.08) single crystals doped with gallium ( C Ga = 0.3–3 mol%) have been investigated. Low‐temperature activation ranges of the impurity conductivity on the dark curves of the resistivity ρ (1/ T ) and Hall coefficient R H (1/ T ) were revealed and attributed to the appearance of gallium‐induced deep levels in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below T c = 50–60 K. The results are discussed in the frame of the model assuming that doping with gallium leads to the formation of two different gallium‐related defect levels in the energy spectrum of the PbTe‐based alloys. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)