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Gallium‐rich reconstructions on GaAs(001)
Author(s) -
Pristovsek M.,
Tsukamoto S.,
Ohtake A.,
Koguchi N.,
Orr B. G.,
Schmidt W. G.,
Bernholc J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301885
Subject(s) - gallium , annealing (glass) , molecular beam epitaxy , anisotropy , spectral line , monolayer , surface reconstruction , crystallography , diffraction , materials science , spectroscopy , gallium arsenide , electron diffraction , molecular physics , analytical chemistry (journal) , chemistry , epitaxy , optics , surface (topology) , nanotechnology , optoelectronics , layer (electronics) , physics , geometry , mathematics , quantum mechanics , astronomy , chromatography , metallurgy , composite material
Ga‐rich reconstructions on GaAs(001) surfaces were prepared by annealing and Ga dosing of Molecular Beam Epitaxy grown samples and analyzed in‐situ by Reflectance Anisotropy Spectroscopy and Reflection High‐Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably results in a (4 × 2)/ c (8 × 2) reconstruction. Lowering the temperature or annealing below 800 K results in a (2 × 6)/(3 × 6) reconstruction. By dosing the (2 × 6)/(3 × 6) reconstruction with more than 0.2 monolayer of gallium, it transforms into a (4 × 6) reconstruction. The observed translational symmetries and measured RAS spectra are compared with results of first‐principles calculations. None of the (2 × 6) structures proposed in the literature is energetically stable. The RAS spectrum calculated for the ζ (4 × 2) model resembles reasonably the data measured for the (4 × 2) surface. The RAS spectra calculated for (2 × 6) symmetries indicate that mixed Ga‐As dimers likely are a structural element of the corresponding surface reconstructions. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)