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Growth of group II–VI semiconductor quantum dots with strong quantum confinement and low size dispersion
Author(s) -
Pandey Praveen K.,
Sharma Kriti,
Nagpal Swati,
Bhatnagar P. K.,
Mathur P. C.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301868
Subject(s) - quantum dot , annealing (glass) , cadmium telluride photovoltaics , dispersion (optics) , quantum annealing , materials science , condensed matter physics , optoelectronics , molecular physics , quantum , chemistry , physics , optics , quantum mechanics , quantum computer , composite material
CdTe quantum dots embedded in glass matrix are grown using two‐step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single‐step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two‐step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single‐step annealed samples. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)