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On the band gap of indium nitride
Author(s) -
Nag B. R.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301823
Subject(s) - indium antimonide , indium , band gap , effective mass (spring–mass system) , materials science , nitride , indium nitride , direct and indirect band gaps , optoelectronics , nanotechnology , physics , quantum mechanics , layer (electronics)
The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct‐gap II–VI and III–V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.