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Thermoelectric power of sulphur at high pressure up to 40 GPa
Author(s) -
Shchennikov Vladimir V.,
Ovsyannikov Sergey V.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301814
Subject(s) - seebeck coefficient , thermoelectric effect , semiconductor , condensed matter physics , materials science , electrical resistivity and conductivity , sulfur , magnetoresistance , electron mobility , metal , chemistry , analytical chemistry (journal) , mineralogy , metallurgy , thermodynamics , optoelectronics , physics , magnetic field , quantum mechanics , chromatography
Abstract From the thermoelectric power S measurements on sulphur at high pressure P , a hole‐type electrical conductivity has been established above 25 GPa. A correlation of the pressure dependence of S with the previously published optical reflectance data has been found. The positive value of S and its decrease with pressure have shown the similarity of the electron structure of sulphur and its neighbours from Group VI – Te and Se. However, a negative magnetoresistance (MR) established at P ≈ 30 GPa points to low mobility of holes and implies an indirect semiconductor gap for sulphur in contrast to the direct gap for Te and Se in the vicinity of the semiconductor–metal phase transition.