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Electronic propertiesof InAs/GaAs self‐assembled quantum dots: beyond the effective mass approximation
Author(s) -
Sheng Weidong,
Leburton JeanPierre
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301778
Subject(s) - quantum dot , poisson's equation , piezoelectricity , condensed matter physics , effective mass (spring–mass system) , stark effect , materials science , electric field , function (biology) , optoelectronics , physics , quantum mechanics , composite material , evolutionary biology , biology
The electronic properties of InAs/GaAs self‐assembled quantum dots (SAD) are investigated as a function of their shapes, sizes and stoichiometric compositions with an eight‐band k p method. Emphasis is placed on the three‐dimensional strain distribution, which is obtained by minimizing the strain energy around the dot region, and the piezoelectric potential, which is calculated by solving the corresponding Poisson equation. Novel features of intraband and interband optical transitions are presented and discussed in relation with the 3D SAD k p band structure, and their response to external electric fields. Finally, particular attention is paid to the quantum Stark effect in vertically coupled lens‐shaped SADs.