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InGaAs quantum dot excited states as determined by microphotoluminescence and resonant photoluminescence
Author(s) -
Bissiri M.,
Baldassarri Höger von Högersthal G.,
Ochoa D.,
Capizzi M.,
Frigeri P.,
Franchi S.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301768
Subject(s) - photoluminescence , excited state , quantum dot , materials science , indium , ground state , optoelectronics , condensed matter physics , atomic physics , physics
Microphotoluminescence and resonant photoluminescence experiments in a variety of InGaAs quantum dots (QD's) differing for size, shape, indium content, and growth technique are reported. In the case of large QD's, the excited state energies determined by the above mentioned two experimental techniques show a quite different dependence on the QD ground state energy. Possible causes of this disagreement are discussed.