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Exciton–LO‐phonon coupling in self‐organized InAs/GaAs quantum dots
Author(s) -
Heitz R.,
Schliwa A.,
Bimberg D.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301765
Subject(s) - exciton , quantum dot , phonon , luminescence , raman scattering , semiconductor nanostructures , condensed matter physics , biexciton , coupling (piping) , nanostructure , raman spectroscopy , semiconductor , scattering , materials science , physics , optoelectronics , nanotechnology , quantum mechanics , metallurgy
The exciton–LO‐phonon interaction in self‐organized quantum dots is investigated emphasizing the impact of realistic structural properties. The possibility to engineer the local charge density via the shape and composition profile of such strained quantum dots provides an unique opportunity to optimize the electronic and optical properties of a semiconductor nanostructure. Size‐selective luminescence, resonant Raman scattering, and time‐resolved luminescence experiments provide insight into the exciton‐LO‐phonon and exciton‐photon couplings in self‐organized quantum dots. The impact of the structural details is analyzed based on eight‐band k · p model calculations.