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Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system
Author(s) -
Tonkikh A. A.,
Dubrovskii V. G.,
Cirlin G. E.,
Egorov V. A.,
Ustinov V. M.,
Werner P.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301758
Subject(s) - quantum dot , molecular beam epitaxy , substrate (aquarium) , materials science , condensed matter physics , kinetic energy , quantum , epitaxy , optoelectronics , nanotechnology , physics , quantum mechanics , geology , oceanography , layer (electronics)
The temperature dependence of morphological characteristics of Ge/Si(100) quantum dots grown by molecular beam epitaxy with constant growth rate at different substrate temperatures is investigated. The mean lateral size of quantum dots at 6.2 ML is shown to increase at rising substrate temperature. Comparison of experimental and theoretical results obtained in the frame of kinetic model is performed.