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Electronic transport through large quantum dots in the Kondo regime
Author(s) -
Stefański P.,
Bułka B. R.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301686
Subject(s) - quantum dot , condensed matter physics , conductance , kondo effect , physics , coupling (piping) , fermi level , resonance (particle physics) , quantum , electron , quantum mechanics , materials science , metallurgy
Conductance through a large two‐level quantum dot is investigated theoretically in the strong coupling regime. In large quantum dots the separation between discrete levels becomes smaller than the level width due to strong hybridization with electrodes. In such circumstances, apart from strong electronic correlations in the quantum dot, the indirect interaction between both the spatial levels comes into play. It takes place in lateral quantum dots, where the spatial level index is not conserved during the hybridization process with electrodes. This interaction shifts the Kondo resonance peak in the density of states out of the Fermi surface and alters its intensity. This feature can be observed in the differential conductance dependence vs. bias voltage. The virtual inter‐level mixing is suppressed for temperatures above the Kondo temperature of the system. The results of theoretical predictions are compared with the results of experimental conductance measurements performed on large quantum dots and some non‐typical conductance features are clarified.