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Transport characteristics of ferromagnetic single‐electron transistors
Author(s) -
Weymann I.,
Barnaś J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301647
Subject(s) - ferromagnetism , transistor , electron , condensed matter physics , materials science , electron transport chain , physics , electrical engineering , engineering , chemistry , nuclear physics , voltage , biochemistry
Spin‐dependent electronic transport in a single‐electron transistor with ferromagnetic external electrodes and ferromagnetic or nonmagnetic central part (island) is analyzed theoretically in the sequential tunneling regime. Nonequilibrium magnetic polarization of the island due to spin accumulation (spin‐dependent chemical potential) is taken into account. The accumulation takes place when the spin relaxation time on the island is sufficiently long. The crossover from slow to fast spin relaxation limits is also analyzed. The tunnel magnetoresistance, magnetic polarization of the island, and spin polarization of the flowing current are examined as a function of the bias and gate voltages.