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High‐pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers
Author(s) -
Marko I.P.,
Andreev A.D.,
Adams A.R.,
Krebs R.,
Reithmaier J.P.,
Forchel A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301619
Subject(s) - laser , hydrostatic pressure , lasing threshold , auger effect , photon energy , quantum dot , atomic physics , quantum dot laser , range (aeronautics) , materials science , photon , optoelectronics , quantum well , auger , physics , optics , composite material , thermodynamics
The threshold current of broad area GRINSCH InAs quantum dot (QD) lasers has been measured as a function of hydrostatic pressure in the range of 0–12 kbar. The laser emission photon energy, E laser , increases linearly with pressure, p , at 10.1 meV/kbar and 8.3 meV/kbar for 980 nm and 1.3 μm QD lasers, respectively. For the 980 nm QD lasers the threshold current increases with pressure at a rate proportional to the square of the photon energy, E 2 laser . However, the threshold current of the 1.3 μm QD laser decreases by 26% over a 12 kbar pressure range, demonstrating the importance of the Auger recombination in 1.3 μm QD lasers. The results are discussed in the framework of a theoretical model based on the electronic structure and radiative recombination calculations carried out using an 8 × 8 k · p Hamiltonian.