Experimental study of pressure influence on tunnel transport into 2DEG | Zendy

Dizhur E.M. | Zendy; Voronovsky A.N. | Zendy; Kotelnikov I.N. | Zendy; Dizhur S.E. | Zendy; Feiginov M.N. | Zendy

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Experimental study of pressure influence on tunnel transport into 2DEG

Author(s) -

Dizhur E.M.,

Voronovsky A.N.,

Kotelnikov I.N.,

Dizhur S.E.,

Feiginov M.N.

Publication year - 2003

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200301616

Subject(s) - quantum tunnelling , impurity , condensed matter physics , materials science , insulator (electricity) , metal , chemistry , physics , composite material , metallurgy , organic chemistry

We present the concept and the results of pilot measurements of tunneling in a system Al/ δ Si ‐GaAs under pressure up to 2GPa at 4.2 K. The obtained results may indicate the following: the barrier height for Al/ δ ‐GaAs equals to 0.86 eV at P = 0 and its pressure coefficient is 30 meV/GPa; charged impurity density in the delta‐layer starts to drop from 4.5 × 10 12 cm –2 down to 3.8 × 10 12 cm –2 at about 1.5 GPa; metal–insulator transition may occur in 2 DEG at about 2 GPa.

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