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Experimental study of pressure influence on tunnel transport into 2DEG
Author(s) -
Dizhur E.M.,
Voronovsky A.N.,
Kotelnikov I.N.,
Dizhur S.E.,
Feiginov M.N.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301616
Subject(s) - quantum tunnelling , impurity , condensed matter physics , materials science , insulator (electricity) , metal , chemistry , physics , composite material , metallurgy , organic chemistry
We present the concept and the results of pilot measurements of tunneling in a system Al/ δ Si ‐GaAs under pressure up to 2GPa at 4.2 K. The obtained results may indicate the following: the barrier height for Al/ δ ‐GaAs equals to 0.86 eV at P = 0 and its pressure coefficient is 30 meV/GPa; charged impurity density in the delta‐layer starts to drop from 4.5 × 10 12 cm –2 down to 3.8 × 10 12 cm –2 at about 1.5 GPa; metal–insulator transition may occur in 2 DEG at about 2 GPa.