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Pressure and temperature dependence of the band‐gap in CdTe
Author(s) -
Gilliland S.,
González J.,
Güder H. S.,
Segura A.,
Mora I.,
Muñoz V.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301599
Subject(s) - isothermal process , cadmium telluride photovoltaics , absorption edge , metalorganic vapour phase epitaxy , band gap , atmospheric temperature range , epitaxy , analytical chemistry (journal) , materials science , zinc , chemical vapor deposition , isobaric process , phase transition , chemistry , condensed matter physics , thermodynamics , optoelectronics , nanotechnology , layer (electronics) , physics , chromatography , metallurgy
In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 μm epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Γ v 15 → Γ c 1 ) in the zinc‐blende phase is about 7.1 × 10 –2 eV GPa –1 and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc‐blende phase is about –3.76 × 10 –4 eV K –1 . Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be present. The transition pressure to the NaCl‐type structure in CdTe is found to decrease with increasing temperature (294–500 K) following the law P t = 4.1 GPa – 6.6 × 10 –3 ( T – 273) (K).