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On the elastic properties of InAs under hydrostatic pressure
Author(s) -
Ellaway S.W.,
Faux D.A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301598
Subject(s) - hydrostatic pressure , poisson's ratio , anisotropy , elasticity (physics) , materials science , elastic modulus , bulk modulus , poisson distribution , pressure coefficient , condensed matter physics , band gap , linear elasticity , thermodynamics , physics , optics , finite element method , mathematics , statistics
The effective elastic stiffnesses C 11 and C 12 of InAs are determined as a function of hydrostatic pressure by atomistic simulation. Both C 11 and C 12 are found to increase linearly with pressure. Other quantities such as the Young's modulus, C 44 , the axial strain and the anisotropy coefficient are nearly independent of pressure. Frogley et al. proposed that non‐linear elasticity is required to explain anomalous band‐gap pressure coefficients through an approximately linear increase in the two‐dimensional Poisson's ratio [Phys. Rev. B 62 , 13612 (2000)]. Our calculations confirm the increase in the two‐dimensional Poisson's ratio. Results are in good agreement if the experimental value of C ′ 11 , the pressure derivative of the elastic stiffness, is used. It is suggested that experimental data for band‐gap pressure coefficients might be used to improve the quality of atomistic interatomic potentials for the III–V semiconductors.