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Large excitation‐power dependence of pressure coefficients of In x Ga 1– x N/In y Ga 1– y N quantum wells
Author(s) -
Li Q.,
Fang Z.L.,
Xu S.J.,
Li G.H.,
Xie M.H.,
Tong S.Y.,
Zhang X.H.,
Liu W.,
Chua S.J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301596
Subject(s) - excitation , hydrostatic pressure , saturation (graph theory) , atomic physics , analytical chemistry (journal) , charge carrier density , physics , chemistry , materials science , condensed matter physics , thermodynamics , mathematics , doping , chromatography , combinatorics , quantum mechanics
Excitation‐power dependence of hydrostatic pressure coefficients (d E /d P ) of In x Ga 1– x N/In y Ga 1– y N multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, d E /d P increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of d E /d P with the excitation power is observed. The increment of d E /d P with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.
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