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Thermoactivated conductivity in p‐GaAs/Al 0.5 Ga 0.5 As below 5 K under combined influence of illumination and uniaxial stress
Author(s) -
Kraak W.,
Mini. Ya.,
Ilievsky A. A.,
Sorensen C. B.,
Berman I. V.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301590
Subject(s) - photoconductivity , materials science , condensed matter physics , diode , excited state , stress (linguistics) , conductivity , electrical resistivity and conductivity , doping , liquid helium , fermi level , optoelectronics , helium , chemistry , electron , atomic physics , electrical engineering , physics , linguistics , philosophy , quantum mechanics , organic chemistry , engineering
Abstract Strongly thermoactivated negative photoconductivity in p‐GaAs/Al 0.5 Ga 0.5 As doped with Be is observed under the combined influence of illumination by a red light emitting diode and uniaxial compression at liquid helium temperatures. The effect can be described in a model with deep donor‐like traps at the heterointerface below the Fermi level, if a barrier between the ground and excited donor‐like states E B = 6 meV is introduced. The barrier does not depend on uniaxial stress that governs the strong resistivity on temperature dependence mainly by the reduction of 2D hole concentration and 2D hole mobility both in dark and under illumination.