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Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells
Author(s) -
Choulis S. A.,
Hosea T. J. C.,
Tomić S.,
KamalSaadi M.,
Weinstein B. A.,
O'Reilly E. P.,
Adams A. R.,
Klar P. J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301589
Subject(s) - hamiltonian (control theory) , quantum well , reflectivity , electronic band structure , materials science , coupling (piping) , condensed matter physics , quantum , tight binding , spectral line , molecular physics , chemistry , optoelectronics , physics , electronic structure , optics , quantum mechanics , mathematics , mathematical optimization , laser , metallurgy
We report pressure dependent photomodulated reflectance (PR) measurements on a series of dilute‐N InGaNAs/GaAs multiple quantum wells (MQWs). Our experimental results indicate the presence of important N‐related disorder effects due to different nearest‐neighbour N‐cation configurations The quantum well transition energies obtained from the PR spectra are modelled using a realistic 10‐band k · p Hamiltonian that includes tight‐binding‐based energies and coupling parameters for the N‐levels. By matching experiment with theory we are able to determine accurately the band structure and thus predict some important material parameters for dilute‐N InGaAsN alloys.