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Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs
Author(s) -
Daunov M. I.,
Kamilov I. K.,
Gabibov S. F.,
Magomedov A. B.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301572
Subject(s) - hydrostatic pressure , valence band , pressure coefficient , acceptor , semiconductor , condensed matter physics , valence (chemistry) , hall effect , materials science , germanium , chemistry , electrical resistivity and conductivity , band gap , physics , optoelectronics , thermodynamics , silicon , organic chemistry , quantum mechanics
The Hall coefficient R and specific resistance ρ have been measured in p‐InSb:Cr, with a hole concentration of about 10 12 cm –3 at T = 77 K, as a function of pressure up to P = 1.5 GPa at T = 77 and 300 K. The deep acceptor level is found to be located at the distance ε A2 = 0.11 eV from the top of the valence band. The pressure coefficient of the valence band maximum ∂ ε V /∂ P was determined relative to the vacuum in semiconductors Ge, InSb, InAs, and GaAs.