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THz lasing due to resonant acceptor states in strained p‐Ge and SiGe quantum‐well structures
Author(s) -
Kagan M. S.,
Altukhov I. V.,
Chirkova E. G.,
Sinis V. P.,
Troeger R. T.,
Ray S. K.,
Kolodzey J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301571
Subject(s) - lasing threshold , materials science , acceptor , emission spectrum , optoelectronics , electric field , quantum well , boron , terahertz radiation , wavelength , laser , condensed matter physics , spectral line , chemistry , physics , optics , quantum mechanics , astronomy , organic chemistry
An intense THz emission was observed from strained SiGe/Si quantum‐well structures under a strong pulsed electric field. The p‐type structures were MBE‐grown on n‐type Si substrates and δ‐doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intra‐center optical transitions between resonant and localized boron levels similar to that in compressed p‐Ge.