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High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures
Author(s) -
Consejo Ch.,
Konczewicz L.,
Contreras S.,
Jouault B.,
Łepkowsky S.,
Zielinski M.,
Robert J. L.,
Lorenzini Ph.,
Cordier Y.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301562
Subject(s) - hydrostatic pressure , heterojunction , materials science , condensed matter physics , hydrostatic equilibrium , fermi gas , electron mobility , gallium nitride , nitride , poisson's equation , electron , optoelectronics , thermodynamics , physics , nanotechnology , quantum mechanics , layer (electronics)
The effect of pressure on electrical transport phenomena has been studied in AlGaN/GaN heterostructures grown on Si substrates. The two‐dimensional character of the conducting carriers has been verified with high magnetic field measurements (up to 13 T) at low temperature ( T = 1.5 K). The two‐dimensional electron gas (2DEG) concentration and mobility were measured as a function of hydrostatic pressure up to 1100 MPa and at different temperatures. The observed pressure changes of the free carrier concentration have been compared with theoretical predictions, taking into account the polarization change in the nitrides and using a fully self‐consistent resolution of Schrödinger and Poisson equations.