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Donor centers in zinc germanium diphosphide produced by electron irradiation
Author(s) -
Gehlhoff W.,
Azamat D.,
Hoffmann A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301545
Subject(s) - electron paramagnetic resonance , hyperfine structure , germanium , irradiation , zinc , electron beam processing , annealing (glass) , fermi level , electron , materials science , atomic physics , center (category theory) , nuclear magnetic resonance , chemistry , crystallography , physics , silicon , optoelectronics , nuclear physics , metallurgy , composite material
Abstract The properties of defects in p‐type zinc germanium diphosphide (ZnGeP 2 ) were studied by means of electron paramagnetic resonance (EPR) and photo‐EPR. Besides the well‐known three native defects (V Zn , V P , Ge Zn ) an S = 1/2 EPR spectrum is observed in electron‐irradiated ZnGeP 2 with an isotropic g = 2.0123 and resolved hyperfine splitting from four equivalent I = 1/2 neighbors. This spectrum is caused by a new center generated by the electron‐irradiation and not by an existing center that is recharged as a result of the irradiation induced Fermi‐level shift. It is tentatively assigned to the isolated Ge vacancy. Observation of the photoinduced recharging processes demonstrates that the location of the level V Ge 3–/2– is at E opt = (0.7 ± 0.06) eV. An annealing of the electron‐irradiated samples causes a reverse shift of the Fermi level in direction to its original position and is accompanied with a reduction of an isotropic unstructured line at g = 2.003 caused by the irradiation damage.