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Hydrogen passivation of the Si Ga donor in GaP
Author(s) -
Ulrici W.,
Clerjaud B.,
Côte D.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301542
Subject(s) - passivation , silicon , hydrogen , trigonal crystal system , line (geometry) , crystallography , doping , materials science , symmetry (geometry) , chemistry , crystal structure , nanotechnology , optoelectronics , geometry , mathematics , organic chemistry , layer (electronics)
In LEC‐grown GaP doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm –1 ( T = 7 K). These lines are due to H stretching modes where hydrogen passivates Si Ga donors. Uniaxial stress experiments show that the Si Ga complex responsible for the 2175.1 cm –1 line has trigonal symmetry and is the isolated passivated Si Ga . The complex creating the 2190.3 cm –1 line has the symmetry C s and contains additionally a B Ga with the four constituents located in an {110} mirror plane. Therefore, also the structure of the group‐IV donohydrogen complexes is in GaP different from that observed in GaAs.