Premium
Complexes of point defects and impurities in electron‐irradiated n‐type Cz‐Si pre‐doped with hydrogen
Author(s) -
Nakanishi A.,
Fukata N.,
Suezawa M.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301538
Subject(s) - impurity , analytical chemistry (journal) , annealing (glass) , doping , irradiation , materials science , hydrogen , electron beam processing , crystallographic defect , electron , absorption spectroscopy , spectral line , absorption (acoustics) , chemistry , crystallography , optics , physics , optoelectronics , organic chemistry , chromatography , astronomy , quantum mechanics , nuclear physics , composite material
Complexes of point defects and impurities in electron‐irradiated n‐type Czochralski‐grown Si (CSi) pre‐doped with hydrogen (H) were studied and the results compared with those in high‐purity specimens. Specimens were n‐type (1.3 Ω cm) Cz‐Si. They were irradiated with 3 MeV electrons at room temperature after hydrogen doping. Optical absorption spectra were measured at 7 K. Spectra were recorded in three wavenumber ranges: 800–1000, 1800–2200 and around 2700 cm –1 . In the first range, optical absorption peaks were observed due to H * 2 , VO 0 (neutral charge state) and VO – (negatively charged state). The concentration of the VO pair in n‐type specimens was higher than that in high‐purity specimens. In the second range, peaks were observed due to H * 2 and complexes of self‐interstitials and H 2 . In the third range, peaks were observed due to V 2 . Due to the isochronal annealing, VO 0 decreased in two stages, 75–200 and 200–400 °C. In the first stage, two new peaks appeared, at 2126 and 2151 cm –1 . They disappeared in the second stage. The activation energies of the first and second stages were about 0.8 and 1.6 eV, respectively.