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THz lasing of SiGe/Si quantum‐well structures due to shallow acceptors
Author(s) -
Kagan M. S.,
Altukhov I. V.,
Chirkova E. G.,
Sinis V. P.,
Troeger R. T.,
Ray S. K.,
Kolodzey J.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301536
Subject(s) - lasing threshold , optoelectronics , terahertz radiation , materials science , emission spectrum , wavelength , boron , electric field , quantum well , laser , spectral line , optics , chemistry , physics , organic chemistry , quantum mechanics , astronomy
Abstract An intense THz emission was observed from strained SiGe/Si quantum‐well structures under strong pulsed electric field. The p‐type structures were MBE‐grown on n‐type Si substrates and δ‐doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intra‐centre optical transitions between resonant and localized boron levels.