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Double thermal donors in Czochralski‐grown silicon heat‐treated under atmospheric and high hydrostatic pressures
Author(s) -
Emtsev V. V.,
Ammerlaan C. A. J.,
Emtsev V. V.,
Oganesyan G. A.,
Andreev B. A.,
Kuritsyn D. I.,
Misiuk A.,
Surma B.,
Londos C. A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301534
Subject(s) - silicon , thermal , hydrostatic equilibrium , materials science , hydrostatic pressure , diffusion , economies of agglomeration , work (physics) , oxygen , thermodynamics , instability , thermal instability , atmospheric pressure , kinetics , chemistry , metallurgy , chemical engineering , mechanics , meteorology , physics , quantum mechanics , engineering , organic chemistry
The formation kinetics of Thermal Double Donors, a dominant family of thermal donors in Czochralski‐grown silicon annealed at T < 600 °C, is studied in detail. A striking enhancement effect of hydrostatic pressures of about 1 GPa on their formation processes, even in a temperature region of thermal instability of these donor centers at about T = 600 °C under normal conditions, is clearly demonstrated. The experimental data obtained in the present work are in agreement with the recent theoretical calculations of oxygen diffusion and agglomeration processes in heat‐treated Si.