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Optically pumped terahertz semiconductor bulk lasers
Author(s) -
Pavlov S. G.,
Hübers H.W.,
Orlova E. E.,
Zhukavin R. Kh.,
Riemann H.,
Nakata H.,
Shastin V. N.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301532
Subject(s) - terahertz radiation , laser , materials science , semiconductor , monocrystalline silicon , optoelectronics , semiconductor laser theory , stimulated emission , silicon , range (aeronautics) , excitation , acceptor , far infrared laser , emission spectrum , impurity , semiconductor optical gain , optics , spectral line , physics , condensed matter physics , quantum mechanics , astronomy , composite material
The principles of stimulated emission for the terahertz frequency range from shallow impurity centers in bulk semiconductors are discussed. Evidence of stimulated emission from group V donors embedded in silicon (P, Sb, Bi) as well as spontaneous emission from Li acceptor in monocrystalline ZnSe under excitation by CO 2 laser radiation at low temperatures is demonstrated. The temporal behavior and the emission spectra of the lasers are presented.