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Resonant states in doped quantum wells
Author(s) -
Blom A.,
Odnoblyudov M.A.,
Yassievich I.N.,
Chao K.A.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301528
Subject(s) - position (finance) , quantum well , resolvent , heterojunction , doping , scattering , condensed matter physics , physics , quantum mechanics , matrix (chemical analysis) , quantum , impurity , materials science , mathematics , mathematical analysis , laser , finance , economics , composite material
Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non‐variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance.