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Optical properties of Si‐, Ge‐ and Sn‐doped GaN
Author(s) -
Shikanaia A.,
Fukahori H.,
Kawakami Y.,
Hazu K.,
Sota T.,
Mitani T.,
Mukai T.,
Fujita Sg.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301525
Subject(s) - sapphire , materials science , photoluminescence , doping , exciton , dephasing , optoelectronics , scattering , molecular physics , condensed matter physics , optics , chemistry , physics , laser
Photoluminescence and reflectance spectra of Si‐, Ge‐ and Sn‐doped GaN epilayers grown on sapphire substrates at 10 K have been investigated, by which ionization energies on the Ga site were determined as 29, 30 and 33 meV, respectively. To investigate the coherent properties of excitons, the dephasing times of excitons in undoped and Si‐doped GaN on sapphire substrates and freestanding GaN were measured using the degenerate four‐wave mixing technique. The resulting homogeneous broadenings in undoped and Si‐doped GaN on sapphire substrates were about twice as large as that in freestanding GaN, which indicates that defect‐induced scattering is stronger in the former than in the latter.