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“Some like it shallower” – p‐type doping in SiC
Author(s) -
Deák Peter,
Aradi Bálint,
Gali Adam,
Gerstmann Uwe
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301522
Subject(s) - dopant , acceptor , boron , passivation , doping , hydrogen , materials science , chemistry , nanotechnology , optoelectronics , condensed matter physics , layer (electronics) , physics , organic chemistry
The usual p‐type dopants of SiC, B, and Al, do not produce really shallow levels. In fact, boron can give rise to a secondary very deep acceptor level as well. The picture is complicated by hydrogen which is readily incorporated during in‐growth doping into p‐type material and can passivate both dopants but to a different degree. First principle calculations are reported regarding the interaction of hydrogen with B and Al in SiC. The results explain why hydrogen is incorporated in much higher amounts into B‐doped than into Al‐doped samples, and also reveal the influences of hydrogen on boron to produce the shallower acceptor. It will be shown that hydrogen incorporation during growth does not influence Al. Finally an Al–N–Al complex is proposed as a shallower acceptor in SiC.