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DX behaviour of Si donors in AlGaN alloys
Author(s) -
Brandt Martin S.,
Zeisel Roland,
Gönnenwein Sebastian T. B.,
Bayerl Martin W.,
Stutzmann Martin
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301521
Subject(s) - materials science , quenching (fluorescence) , recombination , photoconductivity , thermal , electron paramagnetic resonance , diagram , condensed matter physics , optoelectronics , thermodynamics , nuclear magnetic resonance , chemistry , optics , fluorescence , physics , biochemistry , gene , statistics , mathematics
Recent experiments on the DX behaviour of Si in AlGaN alloys are reviewed. From persistent photoconductivity, light‐induced electron spin resonance, and thermal quenching experiments as well as from the thermal activation of the generation‐recombination noise, a quantitative configuration coordinate diagram is constructed for pure AlN and Al 0.75 Ga 0.25 N. The effects of DX centres on the properties of AlGaN alloys with lower Al concentration are discussed.