Inelastic electron tunneling due to magnons and phonons of antiferromagnetic layered MnPSe 3  semiconductors | Zendy

Yamaguchi K. | Zendy

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Inelastic electron tunneling due to magnons and phonons of antiferromagnetic layered MnPSe 3 semiconductors

Author(s) -

Yamaguchi K.

Publication year - 2003

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200301509

Subject(s) - magnon , condensed matter physics , antiferromagnetism , quantum tunnelling , electron , phonon , materials science , ferromagnetism , physics , quantum mechanics

Inelastic electron tunneling spectra of Pb/MnPSe 3 /Pb junctions are measured below liquid helium temperature in the normal state of lead under an external magnetic field. The insulating barrier of MnPSe 3 , an antiferromagnetic layered transition metal phosphorous triselenide, is cleaved from a single crystal along the layer. The spectra are explained by interactions between tunneling electrons and MnPSe 3 antiferromagnetic magnons as well as those between tunneling electrons and MnPSe 3 phonons. The contribution of MnPSe 3 magnons to inelastic processes is comparable to that of MnPSe 3 phonons.

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