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Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon
Author(s) -
Lengsfeld P.,
Brehme S.,
Brendel K.,
Genzel Ch.,
Nickel N. H.
Publication year - 2003
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200301414
Subject(s) - raman spectroscopy , doping , materials science , microcrystalline , silicon , crystallite , analytical chemistry (journal) , microcrystalline silicon , spectroscopy , optoelectronics , optics , crystallography , crystalline silicon , chemistry , amorphous silicon , physics , metallurgy , chromatography , quantum mechanics
Raman measurements of heavily doped laser crystallized poly‐Si and as‐deposited μc‐SH show significant differences between the two materials. Poly‐Si samples exhibit the Fano effect just like heavily doped c‐Si samples. This is not true for the heavily doped μc‐SH samples.