Experimental verification of the theoretical model for the photoionization of deep impurity centres in semiconductors | Zendy

Zavadskii Yu. I. | Zendy; Kornilov B. V. | Zendy

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Experimental verification of the theoretical model for the photoionization of deep impurity centres in semiconductors

Author(s) -

Zavadskii Yu. I.,

Kornilov B. V.

Publication year - 1970

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19700420215

Subject(s) - photoionization , photoexcitation , impurity , atomic physics , semiconductor , silicon , valence band , acceptor , materials science , range (aeronautics) , valence (chemistry) , physics , band gap , condensed matter physics , optoelectronics , ionization , ion , excited state , quantum mechanics , composite material

The wavelength dependence of the photoionization cross‐section (PCS) of the Zn acceptor level at E v + 0.31 eV in silicon has been determined for temperatures of 85 and 290 °K from an investigation of the photoexcitation of holes from this level into the valence band. The experimental results are compared with the theoretical predictions based on a deep‐centre model using a short‐range potential. The agreement between theory and experiment is reasonable.

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