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Electron drift velocity and related phenomena in Si
Author(s) -
Costato M.,
Reggiani L.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700420213
Subject(s) - drift velocity , scattering , electron , anisotropy , condensed matter physics , lattice (music) , electron scattering , physics , saturation (graph theory) , optics , quantum mechanics , mathematics , acoustics , combinatorics
The theoretical evaluation of the electron drift velocity in Si has been performed taking into account the lattice scattering mechanisms and the effect of an energy increasing effective mass. A large range of electric fields (1 to 10 5 V/cm) running from the ohmic region up to the saturation region has been explained for different lattice temperatures between 77 and 300 °K. The longitudinal anisotropy of the drift velocity for the crystallographic directions 〈111〉, 〈110〉, and 〈100〉 has been successfully evaluated through the valley repopulation mechanism. The fit with experimental data of various authors ranges from fair to good. The results support the correctness of the present interpretation. Lattice scattering mechanisms and their coupling constants have proven to be self‐consistent in the framework of the theory where the predominance of g type over f‐type scattering is confirmed.