Helicon method for investigation of many‐valley semiconductors | Zendy

Tolutis R. B. | Zendy; Riauka V. L. | Zendy; Pozhela Yu. K. | Zendy

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Helicon method for investigation of many‐valley semiconductors

Author(s) -

Tolutis R. B.,

Riauka V. L.,

Pozhela Yu. K.

Publication year - 1970

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19700420209

Subject(s) - helicon , semiconductor , anisotropy , polarization (electrochemistry) , condensed matter physics , measure (data warehouse) , dispersion (optics) , electron mobility , dispersion relation , materials science , physics , computational physics , chemistry , optics , optoelectronics , quantum mechanics , plasma , database , computer science

A theoretical and experimental analysis of dispersion, polarization, and size resonance frequency of helicon waves in many‐valley semiconductors is made under various assumptions with respect to the structure of the valleys. A new technique to measure carrier concentration, mobility, and coefficient of mobility anisotropy, K , is proposed. The dependence of the dispersion of the helicon waves upon carrier intervalley repopulation in n‐Ge subjected to uniaxial compression P at 78 °K is discussed theoretically along with experimental results. The possibility to measure transverse mobility is shown. The dependence of K on P is observed.

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