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Energy release and electrical resistivity recovery in nickel and nickel with silicon impurity contents following electron irradiation at 20° K
Author(s) -
Cotignola J. M.,
Minier C.,
Paillery A.,
Bonjour E.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700420117
Subject(s) - electrical resistivity and conductivity , nickel , impurity , materials science , irradiation , electron , silicon , range (aeronautics) , analytical chemistry (journal) , atmospheric temperature range , activation energy , electron beam processing , atomic physics , chemistry , metallurgy , composite material , physics , nuclear physics , thermodynamics , organic chemistry , chromatography , quantum mechanics
The stored energy release in Ni and Ni– (0.014, 0.073, and 0.29) at% Si has been measured in the temperature range 40 to 400° K after irradiation with 2 MeV electrons. The resistivity of the samples was measured simultaneously between 40 and 70° K. The ratios of stored energy and resistivity obtained in stage I are