Energy release and electrical resistivity recovery in nickel and nickel with silicon impurity contents following electron irradiation at 20° K | Zendy

Cotignola J. M. | Zendy; Minier C. | Zendy; Paillery A. | Zendy; Bonjour E. | Zendy

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Energy release and electrical resistivity recovery in nickel and nickel with silicon impurity contents following electron irradiation at 20° K

Author(s) -

Cotignola J. M.,

Minier C.,

Paillery A.,

Bonjour E.

Publication year - 1970

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.19700420117

Subject(s) - electrical resistivity and conductivity , nickel , impurity , materials science , irradiation , electron , silicon , range (aeronautics) , analytical chemistry (journal) , atmospheric temperature range , activation energy , electron beam processing , atomic physics , chemistry , metallurgy , composite material , physics , nuclear physics , thermodynamics , organic chemistry , chromatography , quantum mechanics

The stored energy release in Ni and Ni– (0.014, 0.073, and 0.29) at% Si has been measured in the temperature range 40 to 400° K after irradiation with 2 MeV electrons. The resistivity of the samples was measured simultaneously between 40 and 70° K. The ratios of stored energy and resistivity obtained in stage I are

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