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Galvanomagnetic phenomena in semiconductors with non‐parabolic dispersion law at non‐elastic scattering of carriers
Author(s) -
Tolpygo H. I.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700420116
Subject(s) - condensed matter physics , thermal conduction , scattering , effective mass (spring–mass system) , semiconductor , hall effect , degenerate semiconductor , magnetoresistance , dispersion (optics) , electron , degenerate energy levels , materials science , phonon , phonon scattering , electron mobility , carrier scattering , electrical resistivity and conductivity , physics , magnetic field , optics , doping , quantum mechanics , optoelectronics , composite material
By means of [1] the distribution function, conductivity, Hall coefficient, and magnetoresistance are calculated for non‐degenerate semiconductors with Kane's dispersion law in the temperature and concentration ranges where impurity and optical scattering dominate. Intrinsic conductivity and scattering of electrons by holes are considered at elevated temperatures. Numerical calculations are made and compared with experimental data for n‐InSb. A complicated temperature dependence of the Hall factor with a characteristic “dip” at kT ≈ ħω opt is obtained. Some discrepancy of the theoretically evaluated mobility with experimental results at high temperature is probably due to a not exact knowledge of the parameters of interaction with optical phonons and the neglect of the temperature dependence of the effective mass at the bottom of the conduction band.