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Localized and Self‐Trapped Excitons in CsI
Author(s) -
Lamatsch H.,
Bossel J.,
Saurer E.
Publication year - 1970
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.19700410215
Subject(s) - exciton , excited state , absorption (acoustics) , atomic physics , materials science , condensed matter physics , connection (principal bundle) , molecular physics , physics , composite material , structural engineering , engineering
Additionally to the well‐known 3380 Å band in the excitonic transitions of CsI at LHeT a new emission band at 2900 Å is reported and its behaviour is studied as a function of temperature. Experimental evidence is given which establishes the connection of the 2275 Å absorption band with localized exciton transitions. Measurements using ionizing β‐irradiation especially the temperature dependence of the β‐excited emission give further support to this model.